October 04, 2015

IBM has Carbon Nanotube Electronics Breakthrough

IBM Research announced a major engineering breakthrough that could accelerate carbon nanotubes replacing silicon transistors to power future computing technologies.

IBM scientists demonstrated a new way to shrink transistor contacts without reducing performance of carbon nanotube devices, opening a pathway to dramatically faster, smaller and more powerful computer chips beyond the capabilities of traditional semiconductors.

IBM's breakthrough overcomes a major hurdle that silicon and any semiconductor transistor technologies face when scaling down. In any transistor, two things scale: the channel and its two contacts. As devices become smaller, increased contact resistance for carbon nanotubes has hindered performance gains until now. These results could overcome contact resistance challenges all the way to the 1.8 nanometer node – four technology generations away.

Carbon nanotube chips could greatly improve the capabilities of high performance computers, enabling Big Data to be analyzed faster, increasing the power and battery life of mobile devices and the Internet of Things, and allowing cloud data centers to deliver services more efficiently and economically.


Spreading resistance of carbon nanotube end-contacting bulk electrodes. (A) Schematic showing the geometries of the simulated system with the calculated potential profile and (B) the plot showing the current density distribution of a point-like contact between 20 nm thick 300 nm wide Mo electrode and a 1 nm diameter nanotube


AFM images and line scans of the SWNTs used to build the set of devices with different

Science - End-bonded contacts for carbon nanotube transistors with low, size-independent resistance



Silicon transistors, tiny switches that carry information on a chip, have been made smaller year after year, but they are approaching a point of physical limitation. With Moore's Law running out of steam, shrinking the size of the transistor – including the channels and contacts – without compromising performance has been a vexing challenge troubling researchers for decades.

IBM has previously shown that carbon nanotube transistors can operate as excellent switches at channel dimensions of less than ten nanometers – the equivalent to 10,000 times thinner than a strand of human hair and less than half the size of today’s leading silicon technology. IBM's new contact approach overcomes the other major hurdle in incorporating carbon nanotubes into semiconductor devices, which could result in smaller chips with greater performance and lower power consumption.

Earlier this summer, IBM unveiled the first 7 nanometer node silicon test chip, pushing the limits of silicon technologies and ensuring further innovations for IBM Systems and the IT industry. By advancing research of carbon nanotubes to replace traditional silicon devices, IBM is paving the way for a post-silicon future and delivering on its $3 billion chip R&D investment announced in July 2014.

“These chip innovations are necessary to meet the emerging demands of cloud computing, Internet of Things and Big Data systems,” said Dario Gil, vice president of Science & Technology at IBM Research. “As silicon technology nears its physical limits, new materials, devices and circuit architectures must be ready to deliver the advanced technologies that will be required by the Cognitive Computing era. This breakthrough shows that computer chips made of carbon nanotubes will be able to power systems of the future sooner than the industry expected.



12 pages of supplemental material

Abstract
Moving beyond the limits of silicon transistors requires both a high-performance channel and high-quality electrical contacts. Carbon nanotubes provide high-performance channels below 10 nanometers, but as with silicon, the increase in contact resistance with decreasing size becomes a major performance roadblock. We report a single-walled carbon nanotube (SWNT) transistor technology with an end-bonded contact scheme that leads to size-independent contact resistance to overcome the scaling limits of conventional side-bonded or planar contact schemes. A high-performance SWNT transistor was fabricated with a sub–10-nanometer contact length, showing a device resistance below 36 kilohms and on-current above 15 microampere per tube. The p-type end-bonded contact, formed through the reaction of molybdenum with the SWNT to form carbide, also exhibited no Schottky barrier. This strategy promises high-performance SWNT transistors, enabling future ultimately scaled device technologies.

Making better small contacts

Semiconducting single-walled carbon nanotubes have potential size and conductivity advantages over silicon for making smaller transistors. However, as metal electrical contacts decrease in size, the associated resistance increases to impractical values. Cao et al. reacted molybdenum films with semiconducting carbon nanotubes to create a carbide contact. The resistance of these contacts remained low even for 10-nm-scale contacts.

SOURCES - IBM, Youtube, Science

Форма для связи

Name

Email *

Message *