MRAM data retention improved from 1 hour to 1 year with other gains
Spin Transfer Technologies has developed vastly improved MRAM memory using its unique Precessional Spin Current (PSC™) structure. The results from advanced testing of the PSC structure confirm that it will increase the spin-torque efficiency of any MRAM device by 40-70 percent — enabling dramatically higher data retention while consuming less power. This gain translates to …