Scientists at the National Nano Fab Center at the Korea Advanced Institute of Science and Technology (KAIST) have developed the world’s smallest transistor, with a channel length of 3-nanometers, according to a Korea Herald report. The device is a three-dimensional FinFET. This will allow the development of terabit memories. It could allow conventional silicon integration to provide processors that run at 100-GHz. It could delay the time when a trasition to more exotic technologies such as carbon nanotubes or information processing within molecular materials is needed.