4DS RRAM – Universal Memory Breakthrough, Production in 18-24 months

Startup 4DS Inc. has emerged from stealth mode and claims to have made a major breakthrough in resistive random access memory (RRAM) technology. FRAM, MRAM, phase-change, RRAM and other technologies are vying for dominance in the ”universal memory” race.

4DS’s website and technology details are at this link. The companies chart and the announcement are indicating 1-10 gigabit memory chips at 5-10 nanosecond write times.

4DS memory has the potential to replace all existing semiconductor memories and can be manufactured in a fraction of the process mask steps above standard CMOS as comparable memory technologies such as flas and DRAM,” Pfluger said. ”The 4DS method uses existing semiconductor processes and requires fewer changes to the semiconductor manufacturing equipment, enabling simple manufacturing through a technology that can be scaled significantly farther than NAND or NOR flash.”

4DS’ RRAM is a high-capacity, non-volatile memory with fast switching speeds measured below 5-ns, and with an endurance of 1 billion write/read cycles. Compared to flash memory, RRAM requires lower voltages and lower currents, enabling its use in low power applications, he said.

The real question is whether or not the technology will move into real production. So far, RRAM and other next-generation memory types have failed to live up to their promises. ”With the right partner, we will see our RRAM technology move into production within the next 18 to 24 months,” he added.

RRAM exhibits lower programming currents than phase-change memory or PRAM, the company said. Compared to MRAM, RRAM has a simpler, smaller cell structure. MRAM has a 16F2 structure, while 4DS makes use of a 4F2 technology.