Infineon Technologies AG has produced the first chips (“first silicon”) on a 300-millimeter diameter thin wafer for power semiconductors at the Villach site in Austria. This makes Infineon the first company in the world to succeed in taking this step forward. The chips now produced on a 300-millimeter thin wafer exhibit the same behavior as the power semiconductors made on 200-millimeter wafers – as has been demonstrated by successful application tests using Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) for High Voltage applications.
The first silicon on 300-millimeter (diameter) is an achievement which, among other things, puts Infineon on track to continue its success story with power semiconductors used for energy efficiency applications.
The high-voltage power transistors raise energy efficiency in an array of applications, such as PC power supplies, servers, solar power inverters, lighting and telecommunications systems. These energy-saving chips are also indispensable components in consumer electronics devices, for instance in flat-screen TVs and games consoles. Using energy efficiently and saving energy are becoming the prime requirements for all electrically powered industrial or household applications. Infineon’s energy-efficient semiconductor solutions allow savings of up to 25 percent of global power consumption.