Samsung mass producting 128 Gigabit NAND memory using 10 nanometer lithography

Samsung has begun mass producing a 128-gigabit (Gb), 3-bit multi-level-cell (MLC) NAND memory chip using 10 nanometer (nm)-class process technology this month. This chip will enable high-density memory solutions such as embedded NAND storage and solid state drives (SSDs).

“By introducing next-generation memory storage products like the 128Gb NAND chip, Samsung is extremely well situated to meet growing global customer needs,” said Young-Hyun Jun, executive vice president, memory sales & marketing, Device Solutions Division, Samsung Electronics. “The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market.”

Samsung’s 128Gb NAND flash is based on a 3-bit multi-level-cell design and 10nm-class process technology, which means a process technology node somewhere between 10 and 20 nanometers. It boasts the industry’s highest density as well as the highest performance level of 400 megabits-per-second (mbps) data transfer rate based on the toggle DDR 2.0 interface.

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