Nitride semiconductor on graphene promises 1 terahertz performance

The US Naval Research Laboratory (NRL) in Washington DC has developed a method to grow epitaxial nitride semiconductors on graphene. The researchers hope that this could lead to high-speed current-switching applications using devices such as hot-electron transistors (HETs).

The NRL team believes that using graphene as the base region, in conjunction with nitride semiconductors, could lead to devices with cut-off frequencies greater than 1THz (1000GHz).

Up to now, growth of nitride semiconductors on graphene has resulted in non-uniform GaN crystallites and not a continuous film.

Applied physics express – Epitaxial Growth of III–Nitride/Graphene Heterostructures for Electronic Devices

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