Applied Materials believes FinFETs can be improved and Gate All Around approach can reach 5 nanometer and even 3 nanometer features

Applied Materials has plans to get to 3 nanometer features.

FinFET scaling requires precision control of materials

* CMP: precision through in-situ process control
* Dielectrics: composition tuning
* Junction: optimized activation
* Metal gate: multi Vt by metal gate composition and implant
* Metal gate: improved materials to control resistance at scaled CD
* Contact: optimized surface doping with implant + laser anneal

n3 process would be a 3 nanometer process

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