Samsung Electronics announced that it is mass producing the industry’s first 12-gigabit (Gb) LPDDR4 (low power, double data rate 4) mobile DRAM, based on its advanced 20-nanometer (nm) process technology.
The newest LPDDR4 is expected to significantly accelerate the adoption of high capacity mobile DRAM worldwide. The 12Gb LPDDR4 brings the largest capacity and highest speed available for a DRAM chip, while offering excellent energy efficiency, reliability and ease of design – all essential to developing next-generation mobile devices.
Compared to the preceding 20nm-based 8Gb LPDDR4, the 12Gb version is more than 30 percent faster at 4,266 megabits per second (Mbps), and is twice as fast as DDR4 DRAM for PCs*, while consuming 20 percent less energy. In addition, manufacturing productivity of the 12Gb LPDDR4 has been raised more than 50 percent over that of 20nm-class** 8Gb LPDDR4, which will further fuel demand for higher memory capacity in flagship mobile devices.
The 12Gb LPDDR4 enables 3 gigabyte (GB) or 6GB of mobile DRAM in a single package using just two chips and four chips respectively, while being the only solution that can provide a 6GB LPDDR4 package. In next-generation flagship devices, 6GB of LPDDR4 mobile DRAM will allow consumers to enjoy seamless multitasking and maximum performance within the latest operating system (OS) environments.
SOURCE – Samsung