Researchers combined an aluminum source into their hydride vapor phase epitaxy (HVPE) reactor, then demonstrated the growth of the semiconductors aluminum indium phosphide (AlInP) and aluminum gallium indium phosphide (AlGaInP) for the first time by this technique.
The current world efficiency record for MOVPE-grown GaAs solar cells that incorporate AlInP window layers is 29.1%. With only GaInP, the maximum efficiency for HVPE-grown solar cells is estimated to be only 27%.
Now that aluminum has been added to the mix of D-HVPE, the scientists said they should be able to reach parity with solar cells made via MOVPE.
Researchers demonstrate hydride vapor phase epitaxy (HVPE) of AlxGa1–xAs, AlxIn1–xP, and AlxGayIn1–x–yP using an AlCl3 precursor. We study the growth of the AlxGa1–xAs alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl3. Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of AlxGa1–xAs, and for the first time by HVPE, AlxIn1–xP and AlxGayIn1–x–yP. These results create exciting implications for HVPE-grown high-efficiency III–V solar cells and devices with reduced cost.
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