Ferroelectric Memory Company has $20 million in funding for sub-7 nanometer FeFET memories. This is energy saving non-volatile memory. They will first have 28nm planar CMOS for consumer applications in 2023 followed by IoT and industrial applications and then by automotive applications.
This will be faster than flash memory. This low-power, non-volatile storage technology is based on crystalline, ferroelectric hafnium oxide that can sit directly beside the processor on a chip.
They will use a thousandth of the electricity previously required for memory. This makes them interesting for installation in cell phones and computer clocks, for example, but also for the mostly battery-operated sensors for the Internet of Things.
SOURCES- Handelsblatt, Ferroelectric Memory Company
Written By Brian Wang, Nextbigfuture.com
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