Self Assembled 20 Nanometer Transistors Using DiBlock CoPolymer Lithography
Semiconductor Research Corporation (SRC), the world’s leading university-research consortium for semiconductors and related technologies, and researchers from Stanford University and Taiwan Semiconductor Manufacturing Company (TSMC) today announced they have developed the industry’s first top-gated field effect transistor (FETs) and CMOS inverters featuring 20 nanometer (nm) contact holes using diblock copolymer lithography. In recent years, researchers …