NEO Semiconductor 3D X-DRAM With 8x the Density Of DDR5 Computer Memory

Neo Semiconductor has announced the world’s first 3D stackable DRAM technology, called 3D X-DRAM, that could revolutionize computer memory. Neo estimates 3D X-DRAM can achieve 128Gb density with 230 layers. This is 8 times greater compared to today’s best solutions with DDR5 technology. Neo Semiconductor is located in San Jose, California. 3D stacking of silicon …

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Penn Engineers Pave Way for Chip Components that Could Serve as Both RAM and ROM

New materials may also enable entirely new paradigms for individual chip components and their overall design. One long-promised advance is the ferroelectric field-effect transistor, or FE-FET. Such devices could switch states rapidly enough to perform computation, but also be able to hold those states without being powered, enabling them to function as long-term memory storage. …

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