– it would increase the amount of storage in a two-dimensional array by a factor of five.
– the new switches can be controlled by two terminals instead of three, as in current chips. This will allow for practical three dimensional memory layers.
– being essentially a mechanical device, such chips will consume virtually no power when storing memory
– On/off power ratio of one million to one instead of ten to one for phase change memory [higher is better]
– James Tour said the new switches are also fast; in fact, they react faster than his lab’s current testing systems can measure.
– they’re robust. “We’ve tested it in the lab 20,000 times with no degradation,” said Tour. “Its lifetime is going to be huge, much better than flash memory.”
– Typically, graphene is very hard to think about fabricating commercially,” he said, “but this can be done very easily by deposition.
Transistors are the basis for electronic switching and memory devices as they exhibit extreme reliabilities with on/off ratios of 10,000–100,000, and billions of these three-terminal devices can be fabricated on single planar substrates. On the other hand, two-terminal devices coupled with a nonlinear current–voltage response can be considered as alternatives provided they have large and reliable on/off ratios and that they can be fabricated on a large scale using conventional or easily accessible methods. Here, we report that two-terminal devices consisting of discontinuous 5–10 nm thin films of graphitic sheets grown by chemical vapour deposition on either nanowires or atop planar silicon oxide exhibit enormous and sharp room-temperature bistable current–voltage behaviour possessing stable, rewritable, non-volatile and non-destructive read memories with on/off ratios of up to 10,000,000 and switching times of up to 1 s (tested limit). A nanoelectromechanical mechanism is proposed for the unusually pronounced switching behaviour in the devices.