Diamond CMOS needs symmetrical doping control like we have for semiconductor silicon and diamond n-MOS is needed. The n-channel diamond MOSFETs are demonstrated. This work will enable the development of energy-efficient and high-reliability CMOS integrated circuits for high-power electronics, integrated spintronics, and extreme sensors under harsh environments.
Currently, p-channel diamond MOSFETs have been extensively developed and a routine fabrication process has been established. Owing to the lack of diamond n-MOSs, a complementary circuit has been reported to be accomplished using diamond p-MOSs and III-nitride n-MOSs. Although this is a promising strategy, all-diamond CMOS is the ultimate pursuit to fully exploit the figure-of-merit of diamond, particularly for electronics that operate under harsh environments (high temperatures and strong radiation).
Above – MOSFETs based on phosphorous doped n-type diamond and the electrical characteristics with temperatures up to 573 K. A) Schematic of the MOSFETs. The n+ diamond layer is used to reduce the source and drain contact resistance. The n− diamond layer serves as the channel. B) Optical image of the diamond MOSFETs. C) Transistor properties at 300, 423, and 573 K. The drain current increases by nearly four orders of magnitude from room temperature to 573 K.
n-type channel diamond MOSFETs were demonstrated on phosphorus-doped homoepitaxal (111) diamond epilayer. The n-type (111) diamond epilayer was grown based on a step-flow nucleation mode, enabling the precise control of the crystal quality and the donor distribution. The n-MOSFET showed a high mobility ≈150 cm2 V−1 s−1 at 573 K, a significant feature over other wide-bandgap semiconductors at high temperatures. The excellent high-temperature performance offers the route to develop diamond CMOS circuits for high-power electronics, integrated spintronics, and extreme sensors under harsh environments.
N-type diamonds can stabilize the negatively charged nitrogen-vacancy (NV−) state, greatly improving sensitivity. Thus, diamond CMOS-integrated NV centers are favorable for the development of diamond spin electronics that require dedicated controllability and integrity to scale up the quantum sensing protocol. The deep nature of the phosphorus in diamond benefits the generation of surface p-type conductivity in a lightly phosphorus-doped diamond epilayer with hydrogen termination. Thus, a diamond CMOS based on a planar process on lightly doped n-type diamond can be achieved. By using MEMS technology to engineer the band structure, the performance of n-type diamond MOSFETs can be further improved. This study sheds light on monolithically integrated diamond chips, in which electronics, spintronics, and sensors are based on diamond.
The development of diamond growth technologies, power electronics, spintronics, and microelectromechanical system (MEMS) sensors operatable under high-temperature and strong-radiation conditions, the demand for peripheral circuitry based on diamond CMOS devices has increased for monolithic integration. P-type diamonds are readily accessible through bulk boron doping or surface transfer doping of a hydrogen-terminated diamond surface.
Brian Wang is a Futurist Thought Leader and a popular Science blogger with 1 million readers per month. His blog Nextbigfuture.com is ranked #1 Science News Blog. It covers many disruptive technology and trends including Space, Robotics, Artificial Intelligence, Medicine, Anti-aging Biotechnology, and Nanotechnology.
Known for identifying cutting edge technologies, he is currently a Co-Founder of a startup and fundraiser for high potential early-stage companies. He is the Head of Research for Allocations for deep technology investments and an Angel Investor at Space Angels.
A frequent speaker at corporations, he has been a TEDx speaker, a Singularity University speaker and guest at numerous interviews for radio and podcasts. He is open to public speaking and advising engagements.
Yeah.
What Abelard said…
😉
Diamond deposition is a high temperature process if done by thermal CVD. Plasma CVD cannot give you epitaxial diamond material. It only produces poly-crystalline diamond. Growth rate is slow as well.
What do you think about this claim for single-crystal, 100mm, synthetic diamond wafers?
https://www.df.com/diamond-wafer
Do you think they could be used with the process described in the article?
Plasma assisted CVD is capable of growing ultra high quality diamond! Sure, in the wrong hands it can create defective diamond and poly diamond, but the right hands, it’s an excellent epitaxial growth tool and also can be used to grow millimeters of ultra high quality diamonds.