Intel Will Use Immersion Lithography to 11 nanometers, EUV litho is late, Junctionless Transistor Will Simplify 10 nanometer Work
1. EETimes reports that Intel will be able to extend 193 nm immersion lithography to 11 nanometers, as Extreme Ultraviolet (EUV) lithography is late again Intel hoped to use EUV at 22-nm, which is due out in 2011. The problem is that EUV will not be ready in time for 22- or 15-nm in production–at …