Samsung mass producting 128 Gigabit NAND memory using 10 nanometer lithography
Samsung has begun mass producing a 128-gigabit (Gb), 3-bit multi-level-cell (MLC) NAND memory chip using 10 nanometer (nm)-class process technology this month. This chip will enable high-density memory solutions such as embedded NAND storage and solid state drives (SSDs). “By introducing next-generation memory storage products like the 128Gb NAND chip, Samsung is extremely well situated …